CEU6601 PDF and Equivalents Search

 

CEU6601 Specs and Replacement

Type Designator: CEU6601

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: TO252

CEU6601 substitution

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CEU6601 datasheet

 ..1. Size:428K  cet
 ced6601 ceu6601.pdf pdf_icon

CEU6601

CED6601/CEU6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MA... See More ⇒

 ..2. Size:831K  cn vbsemi
 ceu6601.pdf pdf_icon

CEU6601

CEU6601 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

Detailed specifications: CEU20P10, CEU2303, CEU30P10, CEU3301, CEU3423, CEU4201, CEU4301, CEU4311, 2N7002, CEU6861, CEU95P04, 2N7000A, 2N7000K, 2N7002KA, KTJ6131E, KTJ6131V, KTJ6164S

Keywords - CEU6601 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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