KF80N08P Datasheet. Specs and Replacement
Type Designator: KF80N08P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 228 nS
Cossⓘ - Output Capacitance: 840 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220AB
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KF80N08P substitution
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KF80N08P datasheet
kf80n08p f.pdf
KF80N08P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ FEATURES I + D 0.8 0.1 _ E 3.6 + 0.2 VDSS= 75V, I... See More ⇒
Detailed specifications: KTK5133S, KTK5134S, KTK5162S, KTK5164S, KTK5164U, KF70N06F, KF70N06P, KF80N08F, STP80NF70, KMA010P20Q, KMA2D0DP20X, KMA2D4P20SA, KMA2D7DP20X, KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X
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History: ME2328-G | PSMN5R2-60YL | JMSH1102QE | APG060N85D | CS20N60F | JMH65R110APLNFD | IPD70N03S4L-04
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