KF80N08P Datasheet and Replacement
Type Designator: KF80N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 228 nS
Cossⓘ - Output Capacitance: 840 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220AB
KF80N08P substitution
KF80N08P Datasheet (PDF)
kf80n08p f.pdf

KF80N08P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF80N08PAIt s mainly suitable for low voltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXQC 1.3+0.1/-0.05_FEATURES I+D 0.8 0.1_E 3.6 + 0.2VDSS= 75V, I
Datasheet: KTK5133S , KTK5134S , KTK5162S , KTK5164S , KTK5164U , KF70N06F , KF70N06P , KF80N08F , IRFZ24N , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X .
History: WMJ80N65F2 | SMY60
Keywords - KF80N08P MOSFET datasheet
KF80N08P cross reference
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History: WMJ80N65F2 | SMY60



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