KMA010P20Q Specs and Replacement
Type Designator: KMA010P20Q
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: FLP8
KMA010P20Q substitution
- MOSFET ⓘ Cross-Reference Search
KMA010P20Q datasheet
kma010p20q.pdf
SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES H T VDSS=-20V, ID=-10A. D P G L Drain-Source ON Resistance. RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. A RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A. DIM MILLIMETERS A _ 4.85 0.2 + B1 _ 3.94 + 0.2 B2 _ 6.... See More ⇒
Detailed specifications: KTK5134S, KTK5162S, KTK5164S, KTK5164U, KF70N06F, KF70N06P, KF80N08F, KF80N08P, AO4407, KMA2D0DP20X, KMA2D4P20SA, KMA2D7DP20X, KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X, KMA4D5P20XA
Keywords - KMA010P20Q MOSFET specs
KMA010P20Q cross reference
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KMA010P20Q substitution
KMA010P20Q replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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