All MOSFET. KMA010P20Q Datasheet

 

KMA010P20Q Datasheet and Replacement


   Type Designator: KMA010P20Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: FLP8
 

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KMA010P20Q Datasheet (PDF)

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KMA010P20Q

SEMICONDUCTOR KMA010P20QTECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for battery pack or power managementin cell phone, and PDA. FEATURES HTVDSS=-20V, ID=-10A.D PG LDrain-Source ON Resistance.: RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A.A: RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A.DIM MILLIMETERSA _4.85 0.2+B1 _3.94 + 0.2B2 _6.

Datasheet: KTK5134S , KTK5162S , KTK5164S , KTK5164U , KF70N06F , KF70N06P , KF80N08F , KF80N08P , P60NF06 , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA .

History: KMB035N40DB

Keywords - KMA010P20Q MOSFET datasheet

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