KMA5D8DP20Q MOSFET Datasheet: P-Ch, 20V, 5.8A. Full specification with pinout and replacement list

KMA5D8DP20Q Specs and Replacement

Type Designator: KMA5D8DP20Q

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: FLP8

KMA5D8DP20Q substitution

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KMA5D8DP20Q datasheet

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SEMICONDUCTOR KMA5D8DP20Q TECHNICAL DATA Dual P-CH Trench MOSFET General Description Battery Packs and Battery-powered portable equipment applications. It s mainly suitable for use as a load switch in battery powered applications and protection in battery packs. H T D P G L FEATURES VDSS=-20V, ID=-5.8A. A Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=36m (Max.) @ VGS=-4.... See More ⇒

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SEMICONDUCTOR KMA5D2N30XA TECHNICAL DATA N-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES VDSS=30V, ID=5.2A. Drain-S... See More ⇒

Detailed specifications: KMA2D0DP20X, KMA2D4P20SA, KMA2D7DP20X, KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X, KMA4D5P20XA, SI2302, KMA6D5P20Q, KMA7D0NP30Q, KMB010P30QA, KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D, KMB035N40DB