All MOSFET. KMA5D8DP20Q Datasheet

 

KMA5D8DP20Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: KMA5D8DP20Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 37 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: FLP8

 KMA5D8DP20Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMA5D8DP20Q Datasheet (PDF)

 ..1. Size:750K  kec
 kma5d8dp20q.pdf

KMA5D8DP20Q KMA5D8DP20Q

SEMICONDUCTOR KMA5D8DP20QTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionBattery Packs and Battery-powered portable equipment applications.It s mainly suitable for use as a load switch in battery powered applicationsand protection in battery packs.HTD PG LFEATURES VDSS=-20V, ID=-5.8A.ADrain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=36m (Max.) @ VGS=-4.

 9.1. Size:831K  kec
 kma5d2n30xa.pdf

KMA5D8DP20Q KMA5D8DP20Q

SEMICONDUCTOR KMA5D2N30XATECHNICAL DATA N-CH Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for cellular phone and netebookcomputer power management and other battery powered circuits.FEATURES VDSS=30V, ID=5.2A.Drain-S

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