KMA7D0NP30Q PDF and Equivalents Search

 

KMA7D0NP30Q Specs and Replacement

Type Designator: KMA7D0NP30Q

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7(5.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11(17) nS

Cossⓘ - Output Capacitance: 145(160) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017(0.035) Ohm

Package: FLP8

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KMA7D0NP30Q datasheet

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KMA7D0NP30Q

SEMICONDUCTOR KMA7D0NP30Q TECHNICAL DATA N and P-CH Trench MOSFET General Description Switching regulator and DC-DC converter applications. It s mainly suitable for power management in notebook, portable equipment and battery powered systems. A FEATURES 8 5 T N-Channel B1 B2 L VDSS=30V, ID=7A. 1 4 RDS(ON)=17m (Typ.) @ VGS=10V. RDS(ON)=22m (Typ.) @ VGS=4.5V. DIM MILLIMET... See More ⇒

Detailed specifications: KMA2D7DP20X, KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X, KMA4D5P20XA, KMA5D8DP20Q, KMA6D5P20Q, 18N50, KMB010P30QA, KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D, KMB035N40DB, KMB050N60P, KMB050N60PA

Keywords - KMA7D0NP30Q MOSFET specs

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