KMB060N60PA Datasheet. Specs and Replacement

Type Designator: KMB060N60PA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO220AB

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KMB060N60PA datasheet

 ..1. Size:76K  kec
 kmb060n60pa fa.pdf pdf_icon

KMB060N60PA

KMB060N60PA/FA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KMB060N60PA A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 60A I + D 0.8 0.1 ... See More ⇒

 7.1. Size:53K  kec
 kmb060n40ba.pdf pdf_icon

KMB060N60PA

SEMICONDUCTOR KMB060N40BA TECHNICAL DATA N-Ch Trench MOSFET General Description K L A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and power _ A 9.95 + 0.05 B _ B 9.2 + 0.1 Supply. D C 8.00 _ 15.3 0.2 D + P ... See More ⇒

Detailed specifications: KMB035N40DB, KMB050N60P, KMB050N60PA, KMB054N40DA, KMB054N40DB, KMB054N45DA, KMB060N40BA, KMB060N60FA, 7N60, KMB080N75PA, KMB2D0N60SA, KMB3D0P30SA, KMB3D5N40SA, KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA

Keywords - KMB060N60PA MOSFET specs

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