All MOSFET. KMB060N60PA Datasheet

 

KMB060N60PA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMB060N60PA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 220 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm

Package: TO220AB

KMB060N60PA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB060N60PA Datasheet (PDF)

1.1. kmb060n60pa fa.pdf Size:76K _kec

KMB060N60PA
KMB060N60PA

KMB060N60PA/FA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KMB060N60PA A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 60A I + D 0.8 0.1 _

3.1. kmb060n40ba.pdf Size:53K _kec

KMB060N60PA
KMB060N60PA

SEMICONDUCTOR KMB060N40BA TECHNICAL DATA N-Ch Trench MOSFET General Description K L A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and power _ A 9.95 + 0.05 B _ B 9.2 + 0.1 Supply. D C 8.00 _ 15.3 0.2 D + P _

 

Datasheet: KMB035N40DB , KMB050N60P , KMB050N60PA , KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , BUK455-200A , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA .

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