All MOSFET. KMB060N60PA Datasheet

 

KMB060N60PA Datasheet and Replacement


   Type Designator: KMB060N60PA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220AB
 

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KMB060N60PA Datasheet (PDF)

 ..1. Size:76K  kec
 kmb060n60pa fa.pdf pdf_icon

KMB060N60PA

KMB060N60PA/FASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KMB060N60PAAIt s mainly suitable for low viltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXFEATURES QC 1.3+0.1/-0.05_VDSS= 60V, ID= 60A I+D 0.8 0.1

 7.1. Size:53K  kec
 kmb060n40ba.pdf pdf_icon

KMB060N60PA

SEMICONDUCTOR KMB060N40BATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionKLAThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and power_A 9.95 + 0.05B_B 9.2 + 0.1Supply.DC 8.00_15.3 0.2D +P

Datasheet: KMB035N40DB , KMB050N60P , KMB050N60PA , KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , MMIS60R580P , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA .

History: IPI65R660CFD | STP7NK40Z | SSB80R500S | IPI90R1K2C3 | SWF16N60D | SSM9926GEO | KMA3D0N20SA

Keywords - KMB060N60PA MOSFET datasheet

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