All MOSFET. KMB060N60PA Datasheet

 

KMB060N60PA Datasheet and Replacement


   Type Designator: KMB060N60PA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220AB
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KMB060N60PA Datasheet (PDF)

 ..1. Size:76K  kec
 kmb060n60pa fa.pdf pdf_icon

KMB060N60PA

KMB060N60PA/FASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KMB060N60PAAIt s mainly suitable for low viltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXFEATURES QC 1.3+0.1/-0.05_VDSS= 60V, ID= 60A I+D 0.8 0.1

 7.1. Size:53K  kec
 kmb060n40ba.pdf pdf_icon

KMB060N60PA

SEMICONDUCTOR KMB060N40BATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionKLAThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and power_A 9.95 + 0.05B_B 9.2 + 0.1Supply.DC 8.00_15.3 0.2D +P

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History: TK2P60D | IRFBG20

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