All MOSFET. KMB080N75PA Datasheet

 

KMB080N75PA Datasheet and Replacement


   Type Designator: KMB080N75PA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220AB
 

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KMB080N75PA Datasheet (PDF)

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KMB080N75PA

KMB080N75PASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AIt s mainly suitable for low voltage applications such as automotive, OCDC/DC converters and a load switch in battery powered applicationsFE DIM MILLIMETERSG_+A 9.9 0.2BB 15.95 MAXFEATURES QC 1.3+0.1/-0.05_VDSS= 75V, ID= 80A I+D 0.8 0.1_E 3.6 + 0.2

Datasheet: KMB050N60P , KMB050N60PA , KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , RU7088R , KMB2D0N60SA , KMB3D0P30SA , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA , KMB4D5NP55Q .

History: MTB06N03H8

Keywords - KMB080N75PA MOSFET datasheet

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