KMB2D0N60SA PDF and Equivalents Search

 

KMB2D0N60SA Specs and Replacement

Type Designator: KMB2D0N60SA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SOT23

KMB2D0N60SA substitution

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KMB2D0N60SA datasheet

 ..1. Size:58K  kec
 kmb2d0n60sa.pdf pdf_icon

KMB2D0N60SA

SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for portable equipment. L B L DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX FEATURES 2 3 D 0.40+0.15/-0.05 ... See More ⇒

Detailed specifications: KMB050N60PA, KMB054N40DA, KMB054N40DB, KMB054N45DA, KMB060N40BA, KMB060N60FA, KMB060N60PA, KMB080N75PA, IRFZ46N, KMB3D0P30SA, KMB3D5N40SA, KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, KMB4D8DN55Q

Keywords - KMB2D0N60SA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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