KMB5D5NP30Q MOSFET Datasheet: NP-Ch, 30V, 5.5(4.5)A. Full specification with pinout and replacement list

KMB5D5NP30Q Specs and Replacement

Type Designator: KMB5D5NP30Q

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5(4.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.7(4.7) nS

Cossⓘ - Output Capacitance: 155(116) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.045) Ohm

Package: FLP8

KMB5D5NP30Q substitution

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KMB5D5NP30Q datasheet

..1. Size:384K kec
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SEMICONDUCTOR KMB5D5NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=5.5A. A 5.05+0.25/-0.20 RDS(ON)=40m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 ... See More ⇒

9.1. Size:490K kec
kmb5d0np40q.pdf pdf_icon

SEMICONDUCTOR KMB5D0NP40Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES A N-Channel DIM MILLIMETERS A VDSS=40V, ID=5A. 5.05+0.25/-0.20 B1 _ 3.90 + 0.3 RDS(ON)=35m (Max.) @ VGS=10V B2 _ 6.... See More ⇒

Detailed specifications: KMB3D5N40SA, KMB3D5PS30QA, KMB3D9N40TA, KMB4D0N30SA, KMB4D5DN60QA, KMB4D5NP55Q, KMB4D8DN55Q, KMB5D0NP40Q, AOD4184A, KMB6D0DN30QA, KMB6D0DN35QA, KMB6D0NP40QA, KMB6D6N30Q, KMB7D0DN40Q, KMB7D0DN40QA, KMB7D0N40QA, KMB7D0NP30Q