All MOSFET. KMB5D5NP30Q Datasheet

 

KMB5D5NP30Q Datasheet and Replacement


   Type Designator: KMB5D5NP30Q
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5(4.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.7(4.7) nS
   Cossⓘ - Output Capacitance: 155(116) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.045) Ohm
   Package: FLP8
 

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KMB5D5NP30Q Datasheet (PDF)

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KMB5D5NP30Q

SEMICONDUCTOR KMB5D5NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=5.5A.A 5.05+0.25/-0.20: RDS(ON)=40m (Max.) @ VGS=10V_3.90 + 0.3B18 5

 9.1. Size:490K  kec
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KMB5D5NP30Q

SEMICONDUCTOR KMB5D0NP40QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems. HTD PG LFEATURES AN-ChannelDIM MILLIMETERSA: VDSS=40V, ID=5A. 5.05+0.25/-0.20B1 _3.90 + 0.3: RDS(ON)=35m (Max.) @ VGS=10VB2 _6.

Datasheet: KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q , HY1906P , KMB6D0DN30QA , KMB6D0DN35QA , KMB6D0NP40QA , KMB6D6N30Q , KMB7D0DN40Q , KMB7D0DN40QA , KMB7D0N40QA , KMB7D0NP30Q .

History: 2SK2149 | STD5N95K3 | NCEAP40T15AGU | LND250 | AP4434AGYT-HF | IPS60R280PFD7S | NCE60R360

Keywords - KMB5D5NP30Q MOSFET datasheet

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