KF13N60N Datasheet and Replacement
Type Designator: KF13N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO3PN
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KF13N60N Datasheet (PDF)
kf13n60n.pdf

KF13N60NSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode _A +15.60 0.20_B4.80 + 0.20power supplies._
kf13n50p-f.pdf

KF13N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF13N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 13ADra
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 17P10L-TF2-T | AONR30310 | AP3P7R0EMT | 1N65G-T92-B | AONS66407 | SL40P05Y | AP2N050G
Keywords - KF13N60N MOSFET datasheet
KF13N60N cross reference
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History: 17P10L-TF2-T | AONR30310 | AP3P7R0EMT | 1N65G-T92-B | AONS66407 | SL40P05Y | AP2N050G



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