All MOSFET. KF15N50N Datasheet

 

KF15N50N Datasheet and Replacement


   Type Designator: KF15N50N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO3PN
 

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KF15N50N Datasheet (PDF)

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KF15N50N

KF15N50NSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode _A +15.60 0.20_B4.80 + 0.20power supplies._

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF3808 | SM1A02NSF | FDP030N06BF102 | MDP10N055 | AOT1606L | RU55111R | GP28S50XN3P

Keywords - KF15N50N MOSFET datasheet

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