KF17N50N Specs and Replacement
Type Designator: KF17N50N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 223 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 244 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3PN
KF17N50N substitution
- MOSFET ⓘ Cross-Reference Search
KF17N50N datasheet
kf17n50n.pdf
KF17N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _ ... See More ⇒
Detailed specifications: KMB7D6NP30Q, KMB8D0P30Q, KMB8D2N60QA, KMC7D0CN20C, KMC7D0CN20CA, KML0D6NP20EA, KF13N60N, KF15N50N, IRFB4110, KF50N06P, KTK919S, KTK920BT, KTK920BU, KTK920T, KTK920U, KMB035N40DA, KMB6D0DN30QB
Keywords - KF17N50N MOSFET specs
KF17N50N cross reference
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KF17N50N replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: KTK920BT
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