KMD6D0DN40Q Specs and Replacement
Type Designator: KMD6D0DN40Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: FLP8
KMD6D0DN40Q substitution
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KMD6D0DN40Q datasheet
kmd6d0dn40q.pdf
SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=40V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 ... See More ⇒
Detailed specifications: KTK920BU, KTK920T, KTK920U, KMB035N40DA, KMB6D0DN30QB, KMB6D0NS30QA, KMB7D0DN40QB, KMD6D0DN30QA, 7N65, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, KU047N08P, KU086N10F, KU086N10P
Keywords - KMD6D0DN40Q MOSFET specs
KMD6D0DN40Q cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SJ626 | KN0606L
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