KMD7D5P40QA Specs and Replacement
Type Designator: KMD7D5P40QA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: FLP8
KMD7D5P40QA substitution
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KMD7D5P40QA datasheet
kmd7d5p40qa.pdf
SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit. T D P G L U FEATURES A VDSS=-40V, ID=-7.5A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A 4.85 0.2 _ ... See More ⇒
Detailed specifications: KTK920T, KTK920U, KMB035N40DA, KMB6D0DN30QB, KMB6D0NS30QA, KMB7D0DN40QB, KMD6D0DN30QA, KMD6D0DN40Q, IRFP250N, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, KU047N08P, KU086N10F, KU086N10P, KU310N10D
Keywords - KMD7D5P40QA MOSFET specs
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