All MOSFET. KU047N08P Datasheet

 

KU047N08P MOSFET. Datasheet pdf. Equivalent

Type Designator: KU047N08P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 815 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm

Package: TO220AB

KU047N08P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU047N08P Datasheet (PDF)

1.1. ku047n08p.pdf Size:406K _kec

KU047N08P
KU047N08P

KU047N08P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + A 9.9 0.2 B

Datasheet: KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , 75339P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F , KF11N50F .

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