All MOSFET. KU047N08P Datasheet

 

KU047N08P Datasheet and Replacement


   Type Designator: KU047N08P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 815 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO220AB
 

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KU047N08P Datasheet (PDF)

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KU047N08P

KU047N08PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description AThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +A 9.9 0.2B

Datasheet: KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , 12N60 , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F , KF11N50F .

Keywords - KU047N08P MOSFET datasheet

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