KU047N08P PDF and Equivalents Search

 

KU047N08P Specs and Replacement

Type Designator: KU047N08P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 815 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO220AB

KU047N08P substitution

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KU047N08P datasheet

 ..1. Size:406K  kec
 ku047n08p.pdf pdf_icon

KU047N08P

KU047N08P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + A 9.9 0.2 B... See More ⇒

Detailed specifications: KMB7D0DN40QB, KMD6D0DN30QA, KMD6D0DN40Q, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, STP75NF75, KU086N10F, KU086N10P, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F, KF11N50F

Keywords - KU047N08P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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