All MOSFET. KU086N10P Datasheet

 

KU086N10P Datasheet and Replacement


   Type Designator: KU086N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: TO220AB
 

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KU086N10P Datasheet (PDF)

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KU086N10P

KU086N10P/FSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description KU086N10PAThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +

Datasheet: KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F , IRF1010E , KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F , KF11N50F , KF11N50P , KF12N60F .

History: SSF60R099S2E | FDMC86261P | SML10B75 | FDMC86320 | MTB1D0N03RH8 | SSF65R190S2E | IRFR3806

Keywords - KU086N10P MOSFET datasheet

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