KU086N10P Specs and Replacement
Type Designator: KU086N10P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: TO220AB
KU086N10P substitution
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KU086N10P datasheet
ku086n10p f.pdf
KU086N10P/F SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + ... See More ⇒
Detailed specifications: KMD6D0DN40Q, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, KU047N08P, KU086N10F, IRF9540N, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F, KF11N50F, KF11N50P, KF12N60F
Keywords - KU086N10P MOSFET specs
KU086N10P cross reference
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KU086N10P substitution
KU086N10P replacement
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History: KU086N10F
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