KF3N40I Datasheet and Replacement
Type Designator: KF3N40I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: IPAK
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KF3N40I Datasheet (PDF)
kf3n40w.pdf

KF3N40WSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for LED Lighting andswitching mode power supplies.FEATURES VDSS(Min.)= 400V, ID= 2ADrain-Source ON R
kf3n40d-i.pdf

KF3N40D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N40D This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for LED Lighting and C D_A 6.60 + 0.20_B 6.10 + 0.20switching mo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RS1G300GN | 2N3797 | MMBF5457 | 2SK3925-01 | IPD90N06S4-05 | FQB9N50TM | AONR34332C
Keywords - KF3N40I MOSFET datasheet
KF3N40I cross reference
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History: RS1G300GN | 2N3797 | MMBF5457 | 2SK3925-01 | IPD90N06S4-05 | FQB9N50TM | AONR34332C



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