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KF4N20LD Specs and Replacement


   Type Designator: KF4N20LD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.89 Ohm
   Package: DPAK
 

 KF4N20LD substitution

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KF4N20LD Specs

 ..1. Size:596K  kec
 kf4n20ld i.pdf pdf_icon

KF4N20LD

KF4N20LD/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N20LD This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for LED Lighting and C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching m... See More ⇒

 7.1. Size:634K  kec
 kf4n20lw.pdf pdf_icon

KF4N20LD

KF4N20LW SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 1A Drain-Source ON ... See More ⇒

Detailed specifications: KF3N50FS , KF3N50FZ , KF3N50IZ , KF3N60D , KF3N60F , KF3N60I , KF3N60P , KF3N80F , 18N50 , KF4N20LI , KF4N20LW , KF4N65F , KF4N65P , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ .

Keywords - KF4N20LD MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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