KF7N80F MOSFET. Datasheet pdf. Equivalent
Type Designator: KF7N80F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220IS
KF7N80F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF7N80F Datasheet (PDF)
8.1. Size:397K kec
kf7n80p-f.pdf
kf7n80p-f.pdf
KF7N80P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N80PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp
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