KF9N25D Datasheet and Replacement
Type Designator: KF9N25D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: DPAK
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KF9N25D Datasheet (PDF)
kf9n25d.pdf

KF9N25DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for DC/DC Converters LC D_A 6.60 + 0.20_B 6.10 + 0.20and switching mode power
kf9n25p-f.pdf

KF9N25P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF9N25PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC ConvertersE DIM MILLIMETERSG_and switching mode power supplies. A 9.9 +
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TPC8A02-H | SVGP20110NSTR | IRF7495PBF | MXP4004AT | BUP60 | ME2333-G | MEE42942-G
Keywords - KF9N25D MOSFET datasheet
KF9N25D cross reference
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History: TPC8A02-H | SVGP20110NSTR | IRF7495PBF | MXP4004AT | BUP60 | ME2333-G | MEE42942-G



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