KF9N25D Specs and Replacement
Type Designator: KF9N25D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: DPAK
KF9N25D substitution
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KF9N25D datasheet
kf9n25d.pdf
KF9N25D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for DC/DC Converters L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 and switching mode power ... See More ⇒
kf9n25p-f.pdf
KF9N25P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF9N25P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converters E DIM MILLIMETERS G _ and switching mode power supplies. A 9.9 + ... See More ⇒
Detailed specifications: KF7N60F, KF7N60P, KF7N65F, KF7N65P, KF7N68F, KF7N80F, KF8N60F, KF8N60P, IRF640, KF9N25F, KF9N25P, KF9N50F, KF9N50P, KF3N80D, KF3N80I, KF60N06P, KHB1D0N60D
Keywords - KF9N25D MOSFET specs
KF9N25D cross reference
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