KF9N50F Specs and Replacement
Type Designator: KF9N50F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO220IS
KF9N50F substitution
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KF9N50F datasheet
kf9n50p-f.pdf
KF9N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9... See More ⇒
Detailed specifications: KF7N65P, KF7N68F, KF7N80F, KF8N60F, KF8N60P, KF9N25D, KF9N25F, KF9N25P, IRFB4110, KF9N50P, KF3N80D, KF3N80I, KF60N06P, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I
Keywords - KF9N50F MOSFET specs
KF9N50F cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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