KF3N80I Specs and Replacement
Type Designator: KF3N80I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: IPAK
KF3N80I substitution
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KF3N80I datasheet
kf3n80d i.pdf
KF3N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for LED Lighting and L C D _ A 6.60 + 0.20 switching mode power supplies. ... See More ⇒
kf3n80f.pdf
KF3N80F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power supplie... See More ⇒
Detailed specifications: KF8N60F, KF8N60P, KF9N25D, KF9N25F, KF9N25P, KF9N50F, KF9N50P, KF3N80D, AO3400, KF60N06P, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, KHB2D0N60P
Keywords - KF3N80I MOSFET specs
KF3N80I cross reference
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KF3N80I replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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