All MOSFET. KF3N80I Datasheet

 

KF3N80I Datasheet and Replacement


   Type Designator: KF3N80I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: IPAK
 

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KF3N80I Datasheet (PDF)

 8.1. Size:388K  kec
 kf3n80d i.pdf pdf_icon

KF3N80I

KF3N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for LED Lighting andLC D_A 6.60 + 0.20switching mode power supplies.

 8.2. Size:382K  kec
 kf3n80f.pdf pdf_icon

KF3N80I

KF3N80FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power supplie

Datasheet: KF8N60F , KF8N60P , KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P , KF3N80D , IRF3710 , KF60N06P , KHB1D0N60D , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P .

History: SUD50P04-23 | 7NM70G-TM3-T | YJD20N06A | DMP3007SCG | RQ6E050AT | NCE65T2K4I | MPSU65M390

Keywords - KF3N80I MOSFET datasheet

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