KHB2D0N60F Specs and Replacement
Type Designator: KHB2D0N60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO220IS
KHB2D0N60F substitution
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KHB2D0N60F datasheet
khb2d0n60p f f2.pdf
KHB2D0N60P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB2D0N60P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for switching mode A 9.9 + 0.2 B B 15.95 MAX Q powe... See More ⇒
Detailed specifications: KF9N50P, KF3N80D, KF3N80I, KF60N06P, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, 2N7000, KHB2D0N60F2, KHB2D0N60P, KHB3D0N70F, KHB3D0N70P, KHB3D0N90F1, KHB3D0N90F2, KHB3D0N90P1, KHB4D0N65F
Keywords - KHB2D0N60F MOSFET specs
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