KHB3D0N70P MOSFET Datasheet: N-Ch, 700V, 3A. Full specification with pinout and replacement list

KHB3D0N70P Specs and Replacement

Type Designator: KHB3D0N70P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48.5 nS

Cossⓘ - Output Capacitance: 67.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220AB

KHB3D0N70P substitution

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KHB3D0N70P datasheet

..1. Size:1209K kec
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KHB3D0N70P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS= 700V, ID= 3A Drain-Source ON Resistance RDS(ON)... See More ⇒

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KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 M... See More ⇒

Detailed specifications: KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, KHB2D0N60P, KHB3D0N70F, IRFP250N, KHB3D0N90F1, KHB3D0N90F2, KHB3D0N90P1, KHB4D0N65F, KHB4D0N65F2, KHB4D0N65P, KHB4D0N80F1, KHB4D0N80F2