KHB5D0N50P PDF and Equivalents Search

 

KHB5D0N50P Specs and Replacement

Type Designator: KHB5D0N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm

Package: TO220AB

KHB5D0N50P substitution

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KHB5D0N50P datasheet

 ..1. Size:1314K  kec
 khb5d0n50p f f2.pdf pdf_icon

KHB5D0N50P

KHB5D0N50P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB5D0N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0... See More ⇒

Detailed specifications: KHB4D0N80F1, KHB4D0N80F2, KHB4D0N80P1, KHB4D5N60F, KHB4D5N60F2, KHB4D5N60P, KHB5D0N50F, KHB5D0N50F2, SKD502T, KHB6D0N40F, KHB6D0N40F2, KHB6D0N40P, KHB7D0N65F2, KHB7D0N65P1, KHB7D0N80F1, KHB7D0N80P1, KHB7D5N60F1

Keywords - KHB5D0N50P MOSFET specs

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