KHB6D0N40F Datasheet and Replacement
Type Designator: KHB6D0N40F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 97 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220IS
KHB6D0N40F Datasheet (PDF)
khb6d0n40p f f2.pdf

KHB6D0N40P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB6D0N40PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95 MAX
Datasheet: KHB4D0N80F2 , KHB4D0N80P1 , KHB4D5N60F , KHB4D5N60F2 , KHB4D5N60P , KHB5D0N50F , KHB5D0N50F2 , KHB5D0N50P , IRFB3607 , KHB6D0N40F2 , KHB6D0N40P , KHB7D0N65F2 , KHB7D0N65P1 , KHB7D0N80F1 , KHB7D0N80P1 , KHB7D5N60F1 , KHB7D5N60F2 .
History: SL2318
Keywords - KHB6D0N40F MOSFET datasheet
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History: SL2318



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