KHB6D0N40F MOSFET Datasheet: N-Ch, 400V, 6A. Full specification with pinout and replacement list

KHB6D0N40F Specs and Replacement

Type Designator: KHB6D0N40F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220IS

KHB6D0N40F substitution

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KHB6D0N40F datasheet

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KHB6D0N40P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB6D0N40P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for electronic ballast and B B 15.95 MAX... See More ⇒

Detailed specifications: KHB4D0N80F2, KHB4D0N80P1, KHB4D5N60F, KHB4D5N60F2, KHB4D5N60P, KHB5D0N50F, KHB5D0N50F2, KHB5D0N50P, K4145, KHB6D0N40F2, KHB6D0N40P, KHB7D0N65F2, KHB7D0N65P1, KHB7D0N80F1, KHB7D0N80P1, KHB7D5N60F1, KHB7D5N60F2