FDR8508P Datasheet. Specs and Replacement
Type Designator: FDR8508P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SUPERSOT8
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FDR8508P substitution
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FDR8508P datasheet
fdr8508p.pdf
March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10V These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.086 @ VGS = -4.5V. process that has been especially tailored to minimize the Low gate charge. (8nC typical). on s... See More ⇒
fdr858p.pdf
February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level -8 A, -30 V. RDS(ON) = 0.019 @ VGS = -10 V, MOSFETs have been designed to provide a low profile, RDS(ON) = 0.028 @ VGS = -4.5 V. small footprint alternative to industry standard SO-8 little foot type product. Low gate charge (2... See More ⇒
fdr856p.pdf
March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very SuperSOTTM-8 package high den... See More ⇒
Detailed specifications: FDP7045L, FDP8030L, FDR4410, FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, IRF640N, FDR856P, FDR858P, FDS3570, FDS3580, FDS4410, FDS4435, FDS4435A, FDS4953
Keywords - FDR8508P MOSFET specs
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