FDR8508P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDR8508P
Marking Code: .8508
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: SUPERSOT8
FDR8508P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDR8508P Datasheet (PDF)
fdr8508p.pdf
March 1999FDR8508PDual P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10VThese P-Channel 2.5V specified MOSFETs are producedusing Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.086 @ VGS = -4.5V.process that has been especially tailored to minimize the Low gate charge. (8nC typical).on s
fdr858p.pdf
February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of P-Channel Logic Level-8 A, -30 V. RDS(ON) = 0.019 @ VGS = -10 V,MOSFETs have been designed to provide a low profile,RDS(ON) = 0.028 @ VGS = -4.5 V.small footprint alternative to industry standard SO-8 littlefoot type product. Low gate charge (2
fdr856p.pdf
March 1998FDR856P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesSuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This verySuperSOTTM-8 package:high den
Datasheet: FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , IRFP260N , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 .
