KU024N06P PDF and Equivalents Search

 

KU024N06P Specs and Replacement

Type Designator: KU024N06P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO220AB

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KU024N06P datasheet

 ..1. Size:1054K  kec
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KU024N06P

KU024N06P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 60V, ID= 200A ... See More ⇒

Detailed specifications: KHB9D5N20P, KQ9N50P, KMB012N30QA, KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, STF13NM60N, KU034N08P, KU045N10P, KU048N03D, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D, KU082N03Q

Keywords - KU024N06P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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