KU045N10P PDF Specs and Replacement
Type Designator: KU045N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 240 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO220AB
KU045N10P substitution
KU045N10P PDF Specs
ku045n10p.pdf
KU045N10P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 100V, ID= 150A... See More ⇒
Detailed specifications: KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , 2N60 , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , KU082N03Q , KU2303D , KU2303K .
History: APT6010LLLG | IRFP4710
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: APT6010LLLG | IRFP4710
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