KU045N10P Datasheet and Replacement
Type Designator: KU045N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 240 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO220AB
KU045N10P substitution
KU045N10P Datasheet (PDF)
ku045n10p.pdf

KU045N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 100V, ID= 150A
Datasheet: KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , IRF830 , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , KU082N03Q , KU2303D , KU2303K .
History: NCEP40T19GU | NTD5414NT4G | 100N03
Keywords - KU045N10P MOSFET datasheet
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History: NCEP40T19GU | NTD5414NT4G | 100N03



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