All MOSFET. KU045N10P Datasheet

 

KU045N10P MOSFET. Datasheet pdf. Equivalent


   Type Designator: KU045N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 192 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 150 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 240 nS
   Drain-Source Capacitance (Cd): 1000 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
   Package: TO220AB

 KU045N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU045N10P Datasheet (PDF)

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ku045n10p.pdf

KU045N10P KU045N10P

KU045N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 100V, ID= 150A

Datasheet: KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , 13N50 , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , KU082N03Q , KU2303D , KU2303K .

 

 
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