KU045N10P Datasheet. Specs and Replacement

Type Designator: KU045N10P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 240 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO220AB

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KU045N10P datasheet

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KU045N10P

KU045N10P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 100V, ID= 150A... See More ⇒

Detailed specifications: KMB012N30QA, KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P, AO3407, KU048N03D, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D, KU082N03Q, KU2303D, KU2303K

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