KU045N10P MOSFET. Datasheet pdf. Equivalent
Type Designator: KU045N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 192 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 150 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 240 nS
Drain-Source Capacitance (Cd): 1000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
Package: TO220AB
KU045N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KU045N10P Datasheet (PDF)
0.1. ku045n10p.pdf 
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KU045N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 100V, ID= 150A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
