KU056N03Q PDF and Equivalents Search

 

KU056N03Q Specs and Replacement

Type Designator: KU056N03Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.8 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: FLP8

KU056N03Q substitution

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KU056N03Q datasheet

 ..1. Size:803K  kec
ku056n03q.pdf pdf_icon

KU056N03Q

SEMICONDUCTOR KU056N03Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack. T D P G L U FEATURES A VDSS=30V, ID=17A. DIM MILLIMETERS Drain to Source On Resistan... See More ⇒

Detailed specifications: KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P, KU045N10P, KU048N03D, KU054N03D, 75N75, KU063N03Q, KU068N03D, KU082N03Q, KU2303D, KU2303K, KU2303Q, KU2307D, KU2307K

Keywords - KU056N03Q MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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