All MOSFET. KU056N03Q Datasheet

 

KU056N03Q Datasheet and Replacement


   Type Designator: KU056N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15.8 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: FLP8
 

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KU056N03Q Datasheet (PDF)

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KU056N03Q

SEMICONDUCTOR KU056N03QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=17A.DIM MILLIMETERSDrain to Source On Resistan

Datasheet: KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , KU045N10P , KU048N03D , KU054N03D , IRF520 , KU063N03Q , KU068N03D , KU082N03Q , KU2303D , KU2303K , KU2303Q , KU2307D , KU2307K .

History: LTP70N06 | IXFA130N10T2

Keywords - KU056N03Q MOSFET datasheet

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