KU082N03Q PDF and Equivalents Search

 

KU082N03Q Specs and Replacement

Type Designator: KU082N03Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: FLP8

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KU082N03Q datasheet

 ..1. Size:353K  kec
 ku082n03q.pdf pdf_icon

KU082N03Q

SEMICONDUCTOR KU082N03Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION TENTATIVE This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.. H FEATURES T D P G L VDSS=30V, ID=14A. U Drain to Source On Resistance. RDS(O... See More ⇒

Detailed specifications: KU024N06P, KU034N08P, KU045N10P, KU048N03D, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D, STP65NF06, KU2303D, KU2303K, KU2303Q, KU2307D, KU2307K, KU2307Q, KU2310Q, KU2311K

Keywords - KU082N03Q MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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