All MOSFET. KU082N03Q Datasheet

 

KU082N03Q Datasheet and Replacement


   Type Designator: KU082N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: FLP8
 

 KU082N03Q substitution

   - MOSFET ⓘ Cross-Reference Search

 

KU082N03Q Datasheet (PDF)

 ..1. Size:353K  kec
 ku082n03q.pdf pdf_icon

KU082N03Q

SEMICONDUCTOR KU082N03QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONTENTATIVEThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for DC/DC Converter and Battery pack..HFEATURES TD P GLVDSS=30V, ID=14A.UDrain to Source On Resistance.RDS(O

Datasheet: KU024N06P , KU034N08P , KU045N10P , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , IRF1405 , KU2303D , KU2303K , KU2303Q , KU2307D , KU2307K , KU2307Q , KU2310Q , KU2311K .

History: AP9974 | SMK1820F

Keywords - KU082N03Q MOSFET datasheet

 KU082N03Q cross reference
 KU082N03Q equivalent finder
 KU082N03Q lookup
 KU082N03Q substitution
 KU082N03Q replacement

 

 
Back to Top

 


 
.