All MOSFET. KU082N03Q Datasheet

 

KU082N03Q Datasheet and Replacement


   Type Designator: KU082N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: FLP8
 

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KU082N03Q Datasheet (PDF)

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KU082N03Q

SEMICONDUCTOR KU082N03QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONTENTATIVEThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for DC/DC Converter and Battery pack..HFEATURES TD P GLVDSS=30V, ID=14A.UDrain to Source On Resistance.RDS(O

Datasheet: KU024N06P , KU034N08P , KU045N10P , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , IRFZ48N , KU2303D , KU2303K , KU2303Q , KU2307D , KU2307K , KU2307Q , KU2310Q , KU2311K .

History: HY050N08B | 2SK1332 | RF4E110BN | 2N6802U | SWSI6N70DA | 2SK1406 | 2N7002ZT

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