KU2311Q Datasheet and Replacement
Type Designator: KU2311Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.8 nS
Cossⓘ - Output Capacitance: 694 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: FLP8
KU2311Q substitution
KU2311Q Datasheet (PDF)
ku2311q.pdf

SEMICONDUCTOR KU2311QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=17A.DIM MILLIMETERSDrain to Source On Resistance
ku2311k.pdf

SEMICONDUCTOR KU2311KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=97A.Low Drain to Source On-state Resistance.: RDS(ON)=5.0m(Max.) @ VGS=10V: RDS(ON)
ku2310q.pdf

SEMICONDUCTOR KU2310QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=19A.DIM MILLIMETERSDrain to Source On Resistance
Datasheet: KU2303D , KU2303K , KU2303Q , KU2307D , KU2307K , KU2307Q , KU2310Q , KU2311K , EMB04N03H , KU2751K , KU390N10P , KMC6D5CN20CA , KMA3D7P20SA , KMA5D2N30XA , KMB8D0P30QA , KMD4D5P30XA , KTK951S .
History: SSU80R850S
Keywords - KU2311Q MOSFET datasheet
KU2311Q cross reference
KU2311Q equivalent finder
KU2311Q lookup
KU2311Q substitution
KU2311Q replacement
History: SSU80R850S



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