All MOSFET. SE4812LT1 Datasheet

 

SE4812LT1 Datasheet and Replacement


   Type Designator: SE4812LT1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23
 

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SE4812LT1 Datasheet (PDF)

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SE4812LT1

FM120-M WILLASTHRUSE4812LT130V N-Channel Enhancement-Mode MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toV

Datasheet: SE2312 , SE2321 , SE3400 , SE3401 , SE3404 , SE3406 , SE3407 , SE3415 , IRLB4132 , SE9435LT1 , SMG2305L , SRK7002LT1 , H01N45A , H01N60I , H01N60SA , H01N60SI , H01N60SJ .

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