All MOSFET. SE9435LT1 Datasheet

 

SE9435LT1 Datasheet and Replacement


   Type Designator: SE9435LT1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23
 

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SE9435LT1 Datasheet (PDF)

 ..1. Size:469K  willas
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SE9435LT1

FM120-M WILLASTHRUSE9435LT130V P-Channel Enhancement-Mode MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

 8.1. Size:333K  cn sino-ic
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SE9435LT1

SHANGHAI August 2005 MICROELECTRONICS CO., LTD. SE9435 P-Channel Enhancement Mode Power MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS = -30 V best combination of fast switching, low ID = -5.3 A on-resistance and cost-effectiveness. RDS(ON) = 0.050 @VGS = -10V Low gate charge. Fast switching speed. Applications Power management

Datasheet: SE2321 , SE3400 , SE3401 , SE3404 , SE3406 , SE3407 , SE3415 , SE4812LT1 , IRFP450 , SMG2305L , SRK7002LT1 , H01N45A , H01N60I , H01N60SA , H01N60SI , H01N60SJ , H02N60E .

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