SE9435LT1 MOSFET Datasheet: P-Ch, 30V, 5.3A. Full specification with pinout and replacement list

SE9435LT1 Specs and Replacement

Type Designator: SE9435LT1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT23

SE9435LT1 substitution

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SE9435LT1 datasheet

..1. Size:469K willas
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FM120-M WILLAS THRU SE9435LT1 30V P-Channel Enhancement-Mode MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to ... See More ⇒

8.1. Size:333K cn sino-ic
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SHANGHAI August 2005 MICROELECTRONICS CO., LTD. SE9435 P-Channel Enhancement Mode Power MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS = -30 V best combination of fast switching, low ID = -5.3 A on-resistance and cost-effectiveness. RDS(ON) = 0.050 @VGS = -10V Low gate charge. Fast switching speed. Applications Power management ... See More ⇒

Detailed specifications: SE2321, SE3400, SE3401, SE3404, SE3406, SE3407, SE3415, SE4812LT1, NCEP15T14, SMG2305L, SRK7002LT1, H01N45A, H01N60I, H01N60SA, H01N60SI, H01N60SJ, H02N60E