All MOSFET. H01N45A Datasheet

 

H01N45A Datasheet and Replacement


   Type Designator: H01N45A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 27.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO92
 

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H01N45A Datasheet (PDF)

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H01N45A

Spec. No. : MOS200408HI-SINCERITYIssued Date : 2004.11.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/4H01N45A Pin AssignmentH01N45A3-Lead Plastic TO-92N-Channel Power Field Effect TransistorPackage Code: APin 1: GatePin 2: DrainPin 3: SourceFeatures321 Typical RDS(on)=4.1 D Extremely High dv/dt Capability 100% Avalanche Tested

Datasheet: SE3404 , SE3406 , SE3407 , SE3415 , SE4812LT1 , SE9435LT1 , SMG2305L , SRK7002LT1 , IRF1407 , H01N60I , H01N60SA , H01N60SI , H01N60SJ , H02N60E , H02N60F , H02N60I , H02N60J .

History: IXTH68N20

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