All MOSFET. H01N45A Datasheet

 

H01N45A Datasheet and Replacement


   Type Designator: H01N45A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 27.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO92
 

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H01N45A Datasheet (PDF)

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H01N45A

Spec. No. : MOS200408HI-SINCERITYIssued Date : 2004.11.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/4H01N45A Pin AssignmentH01N45A3-Lead Plastic TO-92N-Channel Power Field Effect TransistorPackage Code: APin 1: GatePin 2: DrainPin 3: SourceFeatures321 Typical RDS(on)=4.1 D Extremely High dv/dt Capability 100% Avalanche Tested

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRLMS1503

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