H01N45A PDF and Equivalents Search

 

H01N45A Specs and Replacement

Type Designator: H01N45A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 27.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO92

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H01N45A datasheet

 ..1. Size:44K  hsmc
 h01n45a.pdf pdf_icon

H01N45A

Spec. No. MOS200408 HI-SINCERITY Issued Date 2004.11.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/4 H01N45A Pin Assignment H01N45A 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code A Pin 1 Gate Pin 2 Drain Pin 3 Source Features 3 2 1 Typical RDS(on)=4.1 D Extremely High dv/dt Capability 100% Avalanche Tested ... See More ⇒

Detailed specifications: SE3404, SE3406, SE3407, SE3415, SE4812LT1, SE9435LT1, SMG2305L, SRK7002LT1, IRFP450, H01N60I, H01N60SA, H01N60SI, H01N60SJ, H02N60E, H02N60F, H02N60I, H02N60J

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