All MOSFET. FDS6375 Datasheet

 

FDS6375 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS6375

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: SO8

FDS6375 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS6375 Datasheet (PDF)

1.1. fds6375.pdf Size:67K _fairchild_semi

FDS6375
FDS6375

September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel • –8 A, –20 V. R = 24 m? @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 32 m? @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of g

Datasheet: FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , IRF150 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 .

 


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