All MOSFET. FDS6375 Datasheet

 

FDS6375 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS6375
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SO8

 FDS6375 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS6375 Datasheet (PDF)

 ..1. Size:67K  fairchild semi
 fds6375.pdf

FDS6375 FDS6375

September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 8 A, 20 V. R = 24 m @ V = 4.5 V DS(ON) GSgate version of Fairchild Semiconductors advanced R = 32 m @ V = 2.5 V DS(ON) GSPowerTrench process. It has been optimized for power management applications wit

 ..2. Size:178K  onsemi
 fds6375.pdf

FDS6375 FDS6375

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , IRLB4132 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 .

 

 
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