FDS6375 Specs and Replacement
Type Designator: FDS6375
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO8
FDS6375 substitution
- MOSFET ⓘ Cross-Reference Search
FDS6375 datasheet
fds6375.pdf
September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 8 A, 20 V. R = 24 m @ V = 4.5 V DS(ON) GS gate version of Fairchild Semiconductor s advanced R = 32 m @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications wit... See More ⇒
fds6375.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDS3570, FDS3580, FDS4410, FDS4435, FDS4435A, FDS4953, FDS5680, FDS5690, IRF630, FDS6570A, FDS6575, FDS6576, FDS6612A, FDS6614A, FDS6630A, FDS6670A, FDS6675
Keywords - FDS6375 MOSFET specs
FDS6375 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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