FDS6375 Specs and Replacement

Type Designator: FDS6375

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SO8

FDS6375 substitution

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FDS6375 datasheet

 ..1. Size:67K  fairchild semi
fds6375.pdf pdf_icon

FDS6375

September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 8 A, 20 V. R = 24 m @ V = 4.5 V DS(ON) GS gate version of Fairchild Semiconductor s advanced R = 32 m @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications wit... See More ⇒

 ..2. Size:178K  onsemi
fds6375.pdf pdf_icon

FDS6375

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDS3570, FDS3580, FDS4410, FDS4435, FDS4435A, FDS4953, FDS5680, FDS5690, IRF630, FDS6570A, FDS6575, FDS6576, FDS6612A, FDS6614A, FDS6630A, FDS6670A, FDS6675

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.