H03N60E PDF and Equivalents Search

 

H03N60E Specs and Replacement

Type Designator: H03N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO220AB

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H03N60E datasheet

 8.1. Size:56K  hsmc
 h03n60.pdf pdf_icon

H03N60E

Spec. No. MOS200602 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.07 MICROELECTRONICS CORP. Page No. 1/5 H03N60 Series Pin Assignment H03N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source 3 This high voltage MOSFET uses an advanced termination scheme to 2 1 ... See More ⇒

Detailed specifications: H02N60I, H02N60J, H02N60SE, H02N60SF, H02N60SI, H02N60SJ, H02N65E, H02N65F, IRF520, H03N60F, H04N60E, H04N60F, H04N65E, H04N65F, H05N50E, H05N50F, H05N60E

Keywords - H03N60E MOSFET specs

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