All MOSFET. H03N60E Datasheet

 

H03N60E Datasheet and Replacement


   Type Designator: H03N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220AB
 

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H03N60E Datasheet (PDF)

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H03N60E

Spec. No. : MOS200602HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H03N60 Series Pin AssignmentH03N60 SeriesTabN-Channel Power Field Effect Transistor3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: Source3This high voltage MOSFET uses an advanced termination scheme to 21

Datasheet: H02N60I , H02N60J , H02N60SE , H02N60SF , H02N60SI , H02N60SJ , H02N65E , H02N65F , STF13NM60N , H03N60F , H04N60E , H04N60F , H04N65E , H04N65F , H05N50E , H05N50F , H05N60E .

History: 4N80L-TND-R | RDD022N60 | ME80N08AH-G | IXFB44N100Q3 | LNF12N60 | RTL020P02FRA | ME95N10F-G

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