All MOSFET. H03N60F Datasheet

 

H03N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: H03N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 66 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO220FP

H03N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H03N60F Datasheet (PDF)

4.1. h03n60.pdf Size:56K _hsmc

H03N60F
H03N60F

Spec. No. : MOS200602 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H03N60 Series Pin Assignment H03N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source 3 This high voltage MOSFET uses an advanced termination scheme to 2 1 pro

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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