H04N60F MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

H04N60F Specs and Replacement

Type Designator: H04N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220FP

H04N60F substitution

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H04N60F datasheet

8.1. Size:123K hsmc
h04n60.pdf pdf_icon

Spec. No. MOS200404 HI-SINCERITY Issued Date 2004.07.01 Revised Date 2010.10.14 MICROELECTRONICS CORP. Page No. 1/6 H04N60 Series Pin Assignment H04N60 Series Tab 3-Lead Plastic TO-263 Package Code U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab 3-Lead Plastic TO-220AB This advanced ... See More ⇒

9.1. Size:169K hsmc
h04n65.pdf pdf_icon

Spec. No. MOS200802 HI-SINCERITY Issued Date 2008.07.22 Revised Date 2009.03.23 MICROELECTRONICS CORP. Page No. 1/6 H04N65 Series Pin Assignment H04N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor (650V, 4A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Pin 3 Source Description 3 2 1 This advanced high voltage MOSFET is d... See More ⇒

Detailed specifications: H02N60SF, H02N60SI, H02N60SJ, H02N65E, H02N65F, H03N60E, H03N60F, H04N60E, IRFZ24N, H04N65E, H04N65F, H05N50E, H05N50F, H05N60E, H05N60F, H06N60E, H06N60F