H05N50E Specs and Replacement
Type Designator: H05N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220AB
H05N50E substitution
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H05N50E datasheet
h05n50.pdf
Spec. No. MOS200601 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.20 MICROELECTRONICS CORP. Page No. 1/4 H05N50 Series Pin Assignment H05N50 Series Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast switching... See More ⇒
Detailed specifications: H02N65E , H02N65F , H03N60E , H03N60F , H04N60E , H04N60F , H04N65E , H04N65F , P60NF06 , H05N50F , H05N60E , H05N60F , H06N60E , H06N60F , H07N60E , H07N60F , H07N65E .
Keywords - H05N50E MOSFET specs
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