All MOSFET. H05N50E Datasheet

 

H05N50E Datasheet and Replacement


   Type Designator: H05N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220AB
 

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H05N50E Datasheet (PDF)

 8.1. Size:45K  hsmc
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H05N50E

Spec. No. : MOS200601HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4H05N50 Series Pin AssignmentH05N50 SeriesTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast switching

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: H5N5006LM | APQ4ESN50AB

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