All MOSFET. H05N60E Datasheet

 

H05N60E Datasheet and Replacement


   Type Designator: H05N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220AB
 

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H05N60E Datasheet (PDF)

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H05N60E

Spec. No. : MOS200603HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H05N60 Series Pin AssignmentH05N60 SeriesTabN-Channel Power Field Effect Transistor3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: Source3This advanced high voltage MOSFET is designed to withstand high 21

Datasheet: H03N60E , H03N60F , H04N60E , H04N60F , H04N65E , H04N65F , H05N50E , H05N50F , RU6888R , H05N60F , H06N60E , H06N60F , H07N60E , H07N60F , H07N65E , H07N65F , H10N60E .

History: ELM14418AA | SPP15N60C3 | CHM21A2PAGP | HM2809DR | 17P10G-TF1-T | SVF4N65CAFJH

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