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H05N60E Specs and Replacement

Type Designator: H05N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO220AB

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H05N60E datasheet

 8.1. Size:58K  hsmc
 h05n60.pdf pdf_icon

H05N60E

Spec. No. MOS200603 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.07 MICROELECTRONICS CORP. Page No. 1/5 H05N60 Series Pin Assignment H05N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source 3 This advanced high voltage MOSFET is designed to withstand high 2 1 ... See More ⇒

Detailed specifications: H03N60E, H03N60F, H04N60E, H04N60F, H04N65E, H04N65F, H05N50E, H05N50F, AO3400A, H05N60F, H06N60E, H06N60F, H07N60E, H07N60F, H07N65E, H07N65F, H10N60E

Keywords - H05N60E MOSFET specs

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