All MOSFET. H06N60E Datasheet

 

H06N60E Datasheet and Replacement


   Type Designator: H06N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220AB
 

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H06N60E Datasheet (PDF)

 ..1. Size:75K  1
 h06n60u h06n60e h06n60f.pdf pdf_icon

H06N60E

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

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 h06n60.pdf pdf_icon

H06N60E

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

Datasheet: H04N60E , H04N60F , H04N65E , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , IRFZ48N , H06N60F , H07N60E , H07N60F , H07N65E , H07N65F , H10N60E , H10N60F , H10N65E .

History: FQN1N50CTA | GSM3400S

Keywords - H06N60E MOSFET datasheet

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