All MOSFET. H2301N Datasheet

 

H2301N Datasheet and Replacement


   Type Designator: H2301N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.23 nC
   tr ⓘ - Rise Time: 3.73 nS
   Cossⓘ - Output Capacitance: 145.54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

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H2301N Datasheet (PDF)

 ..1. Size:88K  hsmc
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H2301N

Spec. No. : MOS200612 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.11 MICROELECTRONICS CORP. Page No. : 1/4 H2301N Pin Assignment & Symbol H2301N 33-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21SourceFeatures GateDrain RDS(on)

 9.1. Size:491K  cn haohai electr
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H2301N

HAOHAI ELECTRONICS H2301 - 2A, -20V, P-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)120m @ VGS=-4.5V FEATURERDS(ON)170m @ VGS=-2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HFS5N50U | 2SK3497 | FDD8880

Keywords - H2301N MOSFET datasheet

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