H2301N PDF and Equivalents Search

 

H2301N Specs and Replacement

Type Designator: H2301N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.73 nS

Cossⓘ - Output Capacitance: 145.54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT23

H2301N substitution

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H2301N datasheet

 ..1. Size:88K  hsmc
 h2301n.pdf pdf_icon

H2301N

Spec. No. MOS200612 HI-SINCERITY Issued Date 2006.07.01 Revised Date 2006.07.11 MICROELECTRONICS CORP. Page No. 1/4 H2301N Pin Assignment & Symbol H2301N 3 3-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code N Pin 1 Gate 2 Source 3 Drain 2 1 Source Features Gate Drain RDS(on)... See More ⇒

 9.1. Size:491K  cn haohai electr
 h2301.pdf pdf_icon

H2301N

HAOHAI ELECTRONICS H2301 - 2A, -20V, P-Channel MOSFET APPLICATIONS Load switch for portable Features DC/DC converter RDS(ON) 120m @ VGS=-4.5V FEATURE RDS(ON) 170m @ VGS=-2.5V High Density Cell Design For Ultra Industry-standard pinout SOT-23 Package Low On-Resistance Compatible with Existing Surface MountTechniques ... See More ⇒

Detailed specifications: H10N60E, H10N60F, H10N65E, H10N65F, H12N60E, H12N60F, H12N65E, H12N65F, AOD4184A, H2302N, H2305N, H2N7000, H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ

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