All MOSFET. H2301N Datasheet

 

H2301N Datasheet and Replacement


   Type Designator: H2301N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.73 nS
   Cossⓘ - Output Capacitance: 145.54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

 H2301N substitution

   - MOSFET ⓘ Cross-Reference Search

 

H2301N Datasheet (PDF)

 ..1. Size:88K  hsmc
 h2301n.pdf pdf_icon

H2301N

Spec. No. : MOS200612 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.11 MICROELECTRONICS CORP. Page No. : 1/4 H2301N Pin Assignment & Symbol H2301N 33-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21SourceFeatures GateDrain RDS(on)

 9.1. Size:491K  cn haohai electr
 h2301.pdf pdf_icon

H2301N

HAOHAI ELECTRONICS H2301 - 2A, -20V, P-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)120m @ VGS=-4.5V FEATURERDS(ON)170m @ VGS=-2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

Datasheet: H10N60E , H10N60F , H10N65E , H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , HY1906P , H2302N , H2305N , H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ .

History: SIHF510S | 7N60DS | WMK119N12LG4

Keywords - H2301N MOSFET datasheet

 H2301N cross reference
 H2301N equivalent finder
 H2301N lookup
 H2301N substitution
 H2301N replacement

 

 
Back to Top

 


 
.