All MOSFET. H2302N Datasheet

 

H2302N Datasheet and Replacement


   Type Designator: H2302N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.69 nC
   tr ⓘ - Rise Time: 7.56 nS
   Cossⓘ - Output Capacitance: 80.56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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H2302N Datasheet (PDF)

 ..1. Size:88K  hsmc
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H2302N

Spec. No. : MOS200613 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.12 MICROELECTRONICS CORP. Page No. : 1/4 H2302N Pin Assignment & Symbol H2302N 33-Lead Plastic SOT-23 N-Channel Enhancement-Mode MOSFET (20V, 2.4A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21DrainFeatures GateSource RDS(on)

 9.1. Size:482K  cn haohai electr
 h2302.pdf pdf_icon

H2302N

HAOHAI ELECTRONICS H2302 2A 20V N-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)60m @ VGS=4.5V FEATURERDS(ON)100m @ VGS=2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

 9.2. Size:170K  cn haohai electr
 h2302a.pdf pdf_icon

H2302N

HAOHAI ELECTRONICS H2302A 4A, 20V, N-Channel MOSFETApplicationLoad Switch FeaturesPWM ApplicationRDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPP60R1K4C6

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