All MOSFET. H2305N Datasheet

 

H2305N Datasheet and Replacement


   Type Designator: H2305N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT23
 

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H2305N Datasheet (PDF)

 ..1. Size:203K  hsmc
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H2305N

Spec. No. : MOS200807 HI-SINCERITY Issued Date : 2008.11.12 Revised Date :2009,12,15 MICROELECTRONICS CORP. Page No. : 1/5 H2305N Pin Assignment & Symbol H2305N 33-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) Package Code: N Pin 1: Gate 2: Source 3: Drain2 1SourceFeatures Gate RDS(on)

 9.1. Size:302K  cet
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H2305N

CEH2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

Datasheet: H10N65E , H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , AO4468 , H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J .

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