H2305N PDF and Equivalents Search

 

H2305N Specs and Replacement

Type Designator: H2305N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT23

H2305N substitution

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H2305N datasheet

 ..1. Size:203K  hsmc
 h2305n.pdf pdf_icon

H2305N

Spec. No. MOS200807 HI-SINCERITY Issued Date 2008.11.12 Revised Date 2009,12,15 MICROELECTRONICS CORP. Page No. 1/5 H2305N Pin Assignment & Symbol H2305N 3 3-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) Package Code N Pin 1 Gate 2 Source 3 Drain 2 1 Source Features Gate RDS(on)... See More ⇒

 9.1. Size:302K  cet
 ceh2305.pdf pdf_icon

H2305N

CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA... See More ⇒

Detailed specifications: H10N65E, H10N65F, H12N60E, H12N60F, H12N65E, H12N65F, H2301N, H2302N, 60N06, H2N7000, H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ, H3055MJ, H35N03J

Keywords - H2305N MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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