All MOSFET. H2305N Datasheet

 

H2305N MOSFET. Datasheet pdf. Equivalent

Type Designator: H2305N

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.38 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm

Package: SOT23

H2305N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H2305N Datasheet (PDF)

1.1. h2305n.pdf Size:203K _hsmc

H2305N
H2305N

Spec. No. : MOS200807 HI-SINCERITY Issued Date : 2008.11.12 Revised Date :2009,12,15 MICROELECTRONICS CORP. Page No. : 1/5 H2305N Pin Assignment & Symbol H2305N 3 3-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) Package Code: N Pin 1: Gate 2: Source 3: Drain 2 1 Source Features Gate • RDS(on)<58m?@VGS=-4.5V, ID=-4.2A • RDS(on)<71m?@VGS=-2.5

5.1. ceh2305.pdf Size:302K _cet

H2305N
H2305N

CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. RDS(ON) = 119m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C u

Datasheet: H10N65E , H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , IRFP4229 , H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J .

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