H35N03J Datasheet and Replacement
Type Designator: H35N03J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.87 nS
Cossⓘ - Output Capacitance: 268.43 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
H35N03J substitution
H35N03J Datasheet (PDF)
h35n03j.pdf
Spec. No. : MOS200515HI-SINCERITYIssued Date : 2005.01.01Revised Date : 2005.10.14MICROELECTRONICS CORP.Page No. : 1/5 H35N03J Pin AssignmentH35N03JTab 3-Lead Plastic TO-252Package Code: JN-Channel Enhancement-Mode MOSFET (25V, 35A)Pin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceDFeaturesInternal SchematicDiagram RDS(on)=8.5m@VGS=10V, ID=30AG R
Datasheet: H2305N , H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , 20N60 , H4422S , H4435S , H4946DS , H4946S , H50N03J , H6968CTS , H6968S , H8205 .
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