H35N03J Specs and Replacement
Type Designator: H35N03J
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.87 nS
Cossⓘ - Output Capacitance: 268.43 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
H35N03J substitution
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H35N03J datasheet
h35n03j.pdf
Spec. No. MOS200515 HI-SINCERITY Issued Date 2005.01.01 Revised Date 2005.10.14 MICROELECTRONICS CORP. Page No. 1/5 H35N03J Pin Assignment H35N03J Tab 3-Lead Plastic TO-252 Package Code J N-Channel Enhancement-Mode MOSFET (25V, 35A) Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source D Features Internal Schematic Diagram RDS(on)=8.5m @VGS=10V, ID=30A G R... See More ⇒
Detailed specifications: H2305N, H2N7000, H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ, H3055MJ, 20N60, H4422S, H4435S, H4946DS, H4946S, H50N03J, H6968CTS, H6968S, H8205
Keywords - H35N03J MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP3989I-HF | AP3987P | LSE55R066GT | H6968S | KD3400SRG
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