H4422S Datasheet and Replacement
Type Designator: H4422S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SO8
H4422S substitution
H4422S Datasheet (PDF)
h4422s.pdf
Spec. No. : MOS200907 HI-SINCERITY Issued Date : 2009.03.09 Revised Date : MICROELECTRONICS CORP. Page No. : 1/5 H4422S 8-Lead Plastic SO-8 Package Code: S N-Channel Enhancement-Mode MOSFET (30V, 11A) H4422S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate RDS(on)=13.5m@VGS=10V, ID=11A Pin 5 / 6 / 7 / 8: Drain 7 2 RDS(o
Datasheet: H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , IRF540N , H4435S , H4946DS , H4946S , H50N03J , H6968CTS , H6968S , H8205 , H8205A .
History: STD30NF06LT4 | AON6786 | JBE102T | CEB7030L
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: STD30NF06LT4 | AON6786 | JBE102T | CEB7030L
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