All MOSFET. H4422S Datasheet

 

H4422S Datasheet and Replacement


   Type Designator: H4422S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO8
 

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H4422S Datasheet (PDF)

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H4422S

Spec. No. : MOS200907 HI-SINCERITY Issued Date : 2009.03.09 Revised Date : MICROELECTRONICS CORP. Page No. : 1/5 H4422S 8-Lead Plastic SO-8 Package Code: S N-Channel Enhancement-Mode MOSFET (30V, 11A) H4422S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate RDS(on)=13.5m@VGS=10V, ID=11A Pin 5 / 6 / 7 / 8: Drain 7 2 RDS(o

Datasheet: H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , IRF540N , H4435S , H4946DS , H4946S , H50N03J , H6968CTS , H6968S , H8205 , H8205A .

History: IRFZ44RPBF | BL20N50-P

Keywords - H4422S MOSFET datasheet

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