All MOSFET. H4422S Datasheet

 

H4422S Datasheet and Replacement


   Type Designator: H4422S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO8
 

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H4422S Datasheet (PDF)

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H4422S

Spec. No. : MOS200907 HI-SINCERITY Issued Date : 2009.03.09 Revised Date : MICROELECTRONICS CORP. Page No. : 1/5 H4422S 8-Lead Plastic SO-8 Package Code: S N-Channel Enhancement-Mode MOSFET (30V, 11A) H4422S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate RDS(on)=13.5m@VGS=10V, ID=11A Pin 5 / 6 / 7 / 8: Drain 7 2 RDS(o

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AP4024EM

Keywords - H4422S MOSFET datasheet

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