H4422S Specs and Replacement
Type Designator: H4422S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SO8
H4422S substitution
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H4422S datasheet
h4422s.pdf
Spec. No. MOS200907 HI-SINCERITY Issued Date 2009.03.09 Revised Date MICROELECTRONICS CORP. Page No. 1/5 H4422S 8-Lead Plastic SO-8 Package Code S N-Channel Enhancement-Mode MOSFET (30V, 11A) H4422S Symbol & Pin Assignment Features 5 4 Pin 1 / 2 / 3 Source 6 3 Pin 4 Gate RDS(on)=13.5m @VGS=10V, ID=11A Pin 5 / 6 / 7 / 8 Drain 7 2 RDS(o... See More ⇒
Detailed specifications: H2N7000, H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ, H3055MJ, H35N03J, IRF540N, H4435S, H4946DS, H4946S, H50N03J, H6968CTS, H6968S, H8205, H8205A
Keywords - H4422S MOSFET specs
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