All MOSFET. H50N03J Datasheet

 

H50N03J Datasheet and Replacement


   Type Designator: H50N03J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 330.55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252
 

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H50N03J Datasheet (PDF)

 ..1. Size:61K  hsmc
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H50N03J

Spec. No. : MOS200514HI-SINCERITYIssued Date : 2005.01.01Revised Date : 2005.10.14MICROELECTRONICS CORP.Page No. : 1/5 H50N03J Pin AssignmentH50N03JTab 3-Lead Plastic TO-252Package Code: JN-Channel Enhancement-Mode MOSFET (25V, 50A)Pin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceDFeaturesInternal SchematicDiagram RDS(on)=6m@VGS=10V, ID=30AG RDS

 9.1. Size:1704K  cn wxdh
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H50N03J

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

Datasheet: H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S , H4435S , H4946DS , H4946S , IRF640 , H6968CTS , H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 .

History: IRF1010EZS | SHDC220301

Keywords - H50N03J MOSFET datasheet

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