H50N03J Specs and Replacement
Type Designator: H50N03J
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 330.55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
H50N03J substitution
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H50N03J datasheet
h50n03j.pdf
Spec. No. MOS200514 HI-SINCERITY Issued Date 2005.01.01 Revised Date 2005.10.14 MICROELECTRONICS CORP. Page No. 1/5 H50N03J Pin Assignment H50N03J Tab 3-Lead Plastic TO-252 Package Code J N-Channel Enhancement-Mode MOSFET (25V, 50A) Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source D Features Internal Schematic Diagram RDS(on)=6m @VGS=10V, ID=30A G RDS... See More ⇒
dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf
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Detailed specifications: H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S , H4435S , H4946DS , H4946S , IRFZ44 , H6968CTS , H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 .
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