All MOSFET. H6968CTS Datasheet

 

H6968CTS MOSFET. Datasheet pdf. Equivalent


   Type Designator: H6968CTS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 65.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8

 H6968CTS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H6968CTS Datasheet (PDF)

 ..1. Size:92K  hsmc
 h6968cts.pdf

H6968CTS H6968CTS

Spec. No. : MOS200610 HI-SINCERITY Issued Date : 2006.06.01 Revised Date : 2006.02.25 MICROELECTRONICS CORP. Page No. : 1/4 H6968CTS 8-Lead Plastic TSSOP-8 Package Code: TS Dual N-Channel Enhancement-Mode MOSFET (20V, 7.0A) (Battery Switch, ESD Protected) H6968CTS Symbol & Pin Assignment 8 7 6 5Pin 1: Drain Q2 Pin 2 / 3: Source 1 Features Pin 4: Gate 1 Q1Pin

 9.1. Size:44K  hsmc
 h6968s.pdf

H6968CTS H6968CTS

Spec. No. : MOS200510HI-SINCERITYIssued Date : 2005.10.01Revised Date : 2005.10.06MICROELECTRONICS CORP.Page No. : 1/4H6968S / H6968CS8-Lead Plastic SO-8Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)Package Code: S(Battery Switch, ESD Protected)Features RDS(on)=32m@VGS=2.5V, ID=5.5A RDS(on)=24m@VGS=4.5V, ID=6.5A Advanced Trench Process Technol

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History: NDTL03N150C | FQPF9P25 | MSAER38N10A | KRF7313 | BLF7G20L-200

 

 
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