HIRF730 Datasheet and Replacement
Type Designator: HIRF730
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220AB
HIRF730 substitution
HIRF730 Datasheet (PDF)
hirf730.pdf

Spec. No. : MOS200406HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF730 Series Pin AssignmentHIRF730 / HIRF730FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThird Generation HEXFETs from international Rectifier provide thedesigner with the
hirf740.pdf

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo
Datasheet: H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 , HIRF630F , IRFB4227 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , HIRF830F , HIRF840 , HIRF840F , BUZ11S2 .
Keywords - HIRF730 MOSFET datasheet
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