All MOSFET. HIRF730 Datasheet

 

HIRF730 Datasheet and Replacement


   Type Designator: HIRF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220AB
 

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HIRF730 Datasheet (PDF)

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HIRF730

Spec. No. : MOS200406HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF730 Series Pin AssignmentHIRF730 / HIRF730FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThird Generation HEXFETs from international Rectifier provide thedesigner with the

 9.1. Size:48K  hsmc
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HIRF730

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1190

Keywords - HIRF730 MOSFET datasheet

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