HIRF730 Specs and Replacement
Type Designator: HIRF730
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220AB
HIRF730 substitution
- MOSFET ⓘ Cross-Reference Search
HIRF730 datasheet
hirf730.pdf
Spec. No. MOS200406 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source Third Generation HEXFETs from international Rectifier provide the designer with the... See More ⇒
hirf740.pdf
Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o... See More ⇒
Detailed specifications: H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 , HIRF630F , 10N60 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , HIRF830F , HIRF840 , HIRF840F , BUZ11S2 .
Keywords - HIRF730 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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